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Anomalous diffusion of ultra low energy boron implants in silicon

Webb, RP, Foad, MA, Gwilliam, RM, Knights, AP and Thomas, G (1997) Anomalous diffusion of ultra low energy boron implants in silicon DEFECTS AND DIFFUSION IN SILICON PROCESSING, 469. pp. 59-63.

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Item Type: Article
Authors :
NameEmailORCID
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Foad, MAUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Thomas, GUNSPECIFIEDUNSPECIFIED
Date : 1 January 1997
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDdelaRubia, TDUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDCoffa, SUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDStolk, PAUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDRafferty, CSUNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:18
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/834806

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