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Shallow junction formation by decaborane molecular ion implantation

Foad, MA, Webb, R, Smith, R, Matsuo, J, Al-Bayati, A, T-Sheng-Wang, and Cullis, T (2000) Shallow junction formation by decaborane molecular ion implantation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (1). pp. 445-449.

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Item Type: Article
Authors :
NameEmailORCID
Foad, MAUNSPECIFIEDUNSPECIFIED
Webb, Rr.webb@surrey.ac.ukUNSPECIFIED
Smith, RUNSPECIFIEDUNSPECIFIED
Matsuo, JUNSPECIFIEDUNSPECIFIED
Al-Bayati, AUNSPECIFIEDUNSPECIFIED
T-Sheng-Wang, UNSPECIFIEDUNSPECIFIED
Cullis, TUNSPECIFIEDUNSPECIFIED
Date : 1 January 2000
Identification Number : 10.1116/1.591245
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, NANOSCIENCE & NANOTECHNOLOGY, PHYSICS, APPLIED
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:18
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/834802

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