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Near-threshold sputtering mechanisms from a computer simulation of argon- bombarded clean and oxygen-reacted copper single crystals

Webb, RP and Harrison, DE (1982) Near-threshold sputtering mechanisms from a computer simulation of argon- bombarded clean and oxygen-reacted copper single crystals Journal of Applied Physics, 53 (7). pp. 5243-5249.

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Abstract

Normal incidence argon-copper sputtering mechanisms have been investigated for ion energies just above threshold. Identical mechanisms operate in both the (111) and (001) surface orientations. Adsorption of an ordered oxygen overlay on the surface does not destroy the ejection processes. Although the mechanisms produce similar ejected atom energy distributions, the processes may be experimentally distinguishable through the angular emission spectrum of the ejected copper atoms.

Item Type: Article
Authors :
NameEmailORCID
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Harrison, DEUNSPECIFIEDUNSPECIFIED
Date : 1 December 1982
Identification Number : https://doi.org/10.1063/1.331404
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:18
Last Modified : 17 May 2017 15:03
URI: http://epubs.surrey.ac.uk/id/eprint/834786

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