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Spectroscopic and morphological investigation of conjugated photopolymerisable quinquethiophene liquid crystals

McGlashon, A, Whitehead, KS, Bradley, DDC, Campbell, AJ, Zhang, W, Heeney, M, Smilgies, DM, Shkunov, M, Genevicius, K, Amassian, A , Malliaras, GG and Amassian, A Spectroscopic and morphological investigation of conjugated photopolymerisable quinquethiophene liquid crystals Current Applied Physics.

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Abstract

3′-methyl-(5,5′′-bis[3-ethyl-3-(6-phenyl-hexyloxymethyl)-oxetane])-2,2′:5′,2′′-terthiophene (5T(Me)Ox) is a solution processable small molecule semiconductor displaying smectic-C and nematic liquid crystal phases. The pendant oxetane group can be polymerized in situ in the presence of a suitable photoacid at concentrations ≥1% by weight. Spin-coated films of pure 5T(Me)Ox and 5T(Me)Ox doped with the soluble photoacid were characterized by absorption and photoluminescent spectroscopy. Thick pristine films showed absorption and emission from a crystalline phase. Thin monolayer (<5 nm) films, as well as thicker photoacid doped films, instead showed absorption from an H-aggregate phase and emission from an excimer. Optical microscopy showed a significant change in film structure upon addition of the photoacid; large and well-orientated crystals being replaced by much smaller domains which appear to vary in thickness. Grazing Incidence Wide Angle X-Ray Scattering (GIWAXS) was used to characterize the packing and orientation of molecules in the crystalline and doped samples. The results are consistent with the photoacid doped samples forming layers of H-aggregate phase monolayer sheets parallel to the substrate where the photoacid inhibits the transition into the three-dimensionally ordered crystalline phase. Field-effect transistors and light emitting diodes were constructed incorporating 5T(Me)Ox as the active layer. Pure 5T(Me)Ox field-effect transistors showed good, p-type device characteristics, but the morphological changes upon doping result in a loss of transistor action. In the diodes, curing through melting and exposure to UV light followed by photoacid removal resulted in an increase in current density but a decrease in light emission. These results indicate that the presence of the photoacid (≥1% by weight) can have a dramatic effect on the structure, morphology and device performance of ordered, photopatternable materials for organic electronics. © 2011 Elsevier B.V. All rights reserved.

Item Type: Article
Authors :
NameEmailORCID
McGlashon, AUNSPECIFIEDUNSPECIFIED
Whitehead, KSUNSPECIFIEDUNSPECIFIED
Bradley, DDCUNSPECIFIEDUNSPECIFIED
Campbell, AJUNSPECIFIEDUNSPECIFIED
Zhang, WUNSPECIFIEDUNSPECIFIED
Heeney, MUNSPECIFIEDUNSPECIFIED
Smilgies, DMUNSPECIFIEDUNSPECIFIED
Shkunov, Mm.shkunov@surrey.ac.ukUNSPECIFIED
Genevicius, KUNSPECIFIEDUNSPECIFIED
Amassian, AUNSPECIFIEDUNSPECIFIED
Malliaras, GGUNSPECIFIEDUNSPECIFIED
Amassian, AUNSPECIFIEDUNSPECIFIED
Identification Number : 10.1016/j.cap.2011.07.042
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:13
Last Modified : 11 Jul 2017 11:51
URI: http://epubs.surrey.ac.uk/id/eprint/834476

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