Chicane deceleration - An innovative energy contamination control technique in low energy ion implantation

White, N, Chen, J, Mulcahy, C, Biswas, S and Gwilliam, R (2006) Chicane deceleration - An innovative energy contamination control technique in low energy ion implantation AIP Conference Proceedings, 866. pp. 335-339.

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Abstract

High current beams suitable for USJ implantation were generated by 'Chicane Deceleration' involving an s-bend to block contaminants. Implanted wafers were analyzed with 200eV O2+ beams at 45° to resolve the sources of dopant profile variation in fine detail. Energy contamination is essentially eliminated, but for B+ channeling remains important. Unannealed Xj values from 5 to 7 nm are reported for different implant species. © 2006 American Institute of Physics.

Item Type:	Article
Authors :	Name Email ORCID White, N UNSPECIFIED UNSPECIFIED Chen, J UNSPECIFIED UNSPECIFIED Mulcahy, C UNSPECIFIED UNSPECIFIED Biswas, S UNSPECIFIED UNSPECIFIED Gwilliam, R r.gwilliam@surrey.ac.uk UNSPECIFIED
Date :	1 December 2006
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 12:02
Last Modified :	17 May 2017 15:00
URI:	http://epubs.surrey.ac.uk/id/eprint/833717

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