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The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon

Gennaro, S, Giubertoni, D, Bersani, M, Foggiato, J, Yoo, WS, Gwilliam, R and Anderle, M (2006) The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon AIP Conference Proceedings, 866. pp. 113-116.

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Abstract

Shallow Indium implants and Indium-Carbon co-implants have been subjected to flash anneals and a combination of furnace treatments in order to evaluate the electrical properties of the implant and differentiate the behavior between low temperature and high temperature ultra fast thermal treatments, It is found that by using "flash" anneals, higher levels of electrical activation are achievable for the given experimental conditions, This behavior is related to the indium dose and to the dopant diffusion within the layer and its interaction with the carbon. © 2006 American Institute of Physics.

Item Type: Article
Authors :
NameEmailORCID
Gennaro, SUNSPECIFIEDUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Foggiato, JUNSPECIFIEDUNSPECIFIED
Yoo, WSUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Anderle, MUNSPECIFIEDUNSPECIFIED
Date : 1 December 2006
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:02
Last Modified : 17 May 2017 15:00
URI: http://epubs.surrey.ac.uk/id/eprint/833715

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