University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

Rudawski, NG, Jones, KS and Gwilliam, R (2008) Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon MATERIALS SCIENCE & ENGINEERING R-REPORTS, 61 (1-6). pp. 40-58.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Rudawski, NGUNSPECIFIEDUNSPECIFIED
Jones, KSUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 12 May 2008
Identification Number : https://doi.org/10.1016/j.mser.2008.02.002
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, silicon, amorphous, stress, strain, solid-phase epitaxial growth, ion-implantation, 2-DIMENSIONAL AMORPHIZED SI, POINT-DEFECT MECHANISMS, SINGLE-CRYSTAL SILICON, EDGE-INDUCED STRESS, FRACTURE-TOUGHNESS, ORIENTATION DEPENDENCE, CRYSTALLIZATION KINETICS, NONHYDROSTATIC STRESS, ELECTRON-MICROSCOPY, ACTIVATION VOLUME
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:01
Last Modified : 17 May 2017 15:00
URI: http://epubs.surrey.ac.uk/id/eprint/833708

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800