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Stressed solid-phase epitaxial growth of (011) Si

Rudawski, NG, Jones, KS and Gwilliam, R (2009) Stressed solid-phase epitaxial growth of (011) Si JOURNAL OF MATERIALS RESEARCH, 24 (2). pp. 305-309.

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Item Type: Article
Authors :
NameEmailORCID
Rudawski, NGUNSPECIFIEDUNSPECIFIED
Jones, KSUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 1 February 2009
Identification Number : https://doi.org/10.1557/JMR.2009.0056
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, MATERIALS SCIENCE, MULTIDISCIPLINARY, AMORPHOUS-SILICON, ACTIVATION VOLUME, INVERSION LAYERS, RATE SENSITIVITY, REGROWTH RATE, PRESSURE, ORIENTATION, CRYSTALLIZATION, TECHNOLOGY, ANISOTROPY
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:01
Last Modified : 17 May 2017 15:00
URI: http://epubs.surrey.ac.uk/id/eprint/833707

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