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Free carrier lifetime modification for silicon waveguide based devices

Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Gardes, FY, Mashanovich, GZ, Gwilliam, R and Reed, GT (2008) Free carrier lifetime modification for silicon waveguide based devices In: 5th IEEE GFP, 2008-09-17 - 2008-09-19, Cardiff, UK.

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Abstract

We investigate the effects of implanting silicon directly into a silicon waveguide to modify carrier lifetime. Experimental results show over 85% reduction in the carrier lifetime for only a small net increase in optical absorption.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Wright, NMUNSPECIFIEDUNSPECIFIED
Thomson, DJd.thomson@surrey.ac.ukUNSPECIFIED
Litvinenko, KLk.litvinenko@surrey.ac.ukUNSPECIFIED
Headley, WRw.headley@surrey.ac.ukUNSPECIFIED
Smith, AJa.j.smith@surrey.ac.ukUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gardes, FYf.gardes@surrey.ac.ukUNSPECIFIED
Mashanovich, GZg.mashanovich@surrey.ac.ukUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Reed, GTg.reed@surrey.ac.ukUNSPECIFIED
Date : 2008
Identification Number : 10.1109/GROUP4.2008.4638118
Contributors :
ContributionNameEmailORCID
publisherIEEE, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : NONLINEAR ABSORPTION
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:00
Last Modified : 17 May 2017 15:00
URI: http://epubs.surrey.ac.uk/id/eprint/833639

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