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TEM AND RBS STUDIES OF EPITAXIAL COSI2 LAYERS FORMED BY HIGH-DOSE COBALT IMPLANTATION INTO SILICON

REESON, K, DEVEIRMAN, A, GWILLIAM, R, JEYNES, C, SEALY, B and VANLANDUYT, J (1989) TEM AND RBS STUDIES OF EPITAXIAL COSI2 LAYERS FORMED BY HIGH-DOSE COBALT IMPLANTATION INTO SILICON INST PHYS CONF SER (100). pp. 627-634.

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Abstract

Buried layers of CoSi2 have been fabricated by implanting high doses of energetic Co atoms, into single crystal (100) silicon substrates maintained at approximately 550-degrees-C. For doses greater-than-or-equal-to 4 x 10(17) Co-59+ cm-2, at 350 keV, a continuous buried layer of CoSi2 grows epitaxially during implantation. For lower doses the 'as implanted' structure is discontinuous and consists of discrete precipitates of both A- and B- type CoSi2. After annealing at 1000-degrees-C for 30 minutes a continuous buried layer of stoichiometric CoSi2 is produced for doses greater-than-or-equal-to 2 x 10(17) Co-59+ cm-2, at 200 keV and greater-than-or-equal-to 4 x 10(17) Co-59+ cm-2, at 350 keV. For lower doses the synthesised layer is discontinuous and consists of discrete octahedral CoSi2 precipitates which are aligned with the matrix (A-type).

Item Type: Article
Authors :
NameEmailORCID
REESON, KUNSPECIFIEDUNSPECIFIED
DEVEIRMAN, AUNSPECIFIEDUNSPECIFIED
GWILLIAM, RUNSPECIFIEDUNSPECIFIED
JEYNES, Cc.jeynes@surrey.ac.ukUNSPECIFIED
SEALY, BUNSPECIFIEDUNSPECIFIED
VANLANDUYT, JUNSPECIFIEDUNSPECIFIED
Date : 1989
Uncontrolled Keywords : CO IMPLANTATION, SI
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:00
Last Modified : 17 May 2017 15:00
URI: http://epubs.surrey.ac.uk/id/eprint/833638

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