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1.1 to 1.6 μm silicon light emitting diodes and optical gain

Homewood, KP, Lourenço, MA and Gwilliam, RM (2010) 1.1 to 1.6 μm silicon light emitting diodes and optical gain In: 7th IEEE GFP, 2010-09-01 - 2010-09-03, Beijing, China.

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Abstract

We report silicon LEDs showing light emission from 1.1 to 1.6 μm and demonstrate optical gain by incorporating optically active impurities. Nano-engineering enables room temperature operation. As one exemplar, we show that erbium, with local strain engineering provides useful optical emission and gain at 1.5 μm.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Homewood, KPk.homewood@surrey.ac.ukUNSPECIFIED
Lourenço, MAUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 2010
Identification Number : https://doi.org/10.1109/GROUP4.2010.5643347
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:59
Last Modified : 17 May 2017 15:00
URI: http://epubs.surrey.ac.uk/id/eprint/833540

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