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Luminescence of Tm3+in dislocation engineered silicon substrates

Lourenço, MA, Wong, L, Gwilliam, RM and Homewood, KP (2010) Luminescence of Tm3+in dislocation engineered silicon substrates In: 7th IEEE GFP, 2010-09-01 - 2010-09-03, Beijing, China.

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Photoluminescence at 1.2 to1.4 μm is demonstrated in dislocation engineered silicon substrates doped with Tm3+ leading to the development of forward biased light emitting devices operating at a turn-on voltage of only 1 V.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Lourenço, MA
Wong, L
Date : 2010
DOI : 10.1109/GROUP4.2010.5643395
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:59
Last Modified : 23 Jan 2020 17:28

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