University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Luminescence of Tm3+in dislocation engineered silicon substrates

Lourenço, MA, Wong, L, Gwilliam, RM and Homewood, KP (2010) Luminescence of Tm3+in dislocation engineered silicon substrates In: 7th IEEE GFP, 2010-09-01 - 2010-09-03, Beijing, China.

Full text not available from this repository.

Abstract

Photoluminescence at 1.2 to1.4 μm is demonstrated in dislocation engineered silicon substrates doped with Tm3+ leading to the development of forward biased light emitting devices operating at a turn-on voltage of only 1 V.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Lourenço, MAUNSPECIFIEDUNSPECIFIED
Wong, LUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Homewood, KPk.homewood@surrey.ac.ukUNSPECIFIED
Date : 2010
Identification Number : https://doi.org/10.1109/GROUP4.2010.5643395
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:59
Last Modified : 17 May 2017 15:00
URI: http://epubs.surrey.ac.uk/id/eprint/833539

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800