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Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon

Chaudhuri, SK, Goswami, K, Ghugre, SS and Das, D (2011) Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon Physica B: Condensed Matter, 406 (3). pp. 693-698.

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Item Type: Article
Authors :
NameEmailORCID
Chaudhuri, SKs.chaudhuri@surrey.ac.ukUNSPECIFIED
Goswami, KUNSPECIFIEDUNSPECIFIED
Ghugre, SSUNSPECIFIEDUNSPECIFIED
Das, DUNSPECIFIEDUNSPECIFIED
Date : 2011
Identification Number : https://doi.org/10.1016/j.physb.2010.12.001
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:59
Last Modified : 17 May 2017 11:59
URI: http://epubs.surrey.ac.uk/id/eprint/833528

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