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The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes

Henry, MO, McGlynn, E, Fryar, J, Lindner, S and Bollmann, J (2001) The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes In: E-MRS Spring Meeting on Materials Science with Ion Beams, 2000-05-30 - 2000-06-02, STRASBOURG, FRANCE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Henry, MOUNSPECIFIEDUNSPECIFIED
McGlynn, EUNSPECIFIEDUNSPECIFIED
Fryar, Jj.fryar@surrey.ac.ukUNSPECIFIED
Lindner, SUNSPECIFIEDUNSPECIFIED
Bollmann, JUNSPECIFIEDUNSPECIFIED
Date : 1 May 2001
Identification Number : https://doi.org/10.1016/S0168-583X(00)00474-2
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, SILICON, PHOTOLUMINESCENCE, AU
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:50
Last Modified : 17 May 2017 11:51
URI: http://epubs.surrey.ac.uk/id/eprint/832965

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