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Investigation of optical metastability in GaN using photoluminescence spectroscopy

Ryan, BJ, Henry, MO, McGlynn, E and Fryar, J (2003) Investigation of optical metastability in GaN using photoluminescence spectroscopy In: 22nd International Conference on Defects in Semiconductors (ICDS-22), 2003-07-28 - 2003-08-01, UNIV AARHUS, AARHUS, DENMARK.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Ryan, BJUNSPECIFIEDUNSPECIFIED
Henry, MOUNSPECIFIEDUNSPECIFIED
McGlynn, EUNSPECIFIEDUNSPECIFIED
Fryar, Jj.fryar@surrey.ac.ukUNSPECIFIED
Date : 31 December 2003
Identification Number : https://doi.org/10.1016/j.physb.2003.09.024
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, metastability, GaN, defects, FT spectroscopy, UNDOPED GAN, YELLOW LUMINESCENCE, BAND LUMINESCENCE, DOPED GAN, DEFECTS, FILMS, VACANCIES, EPILAYERS, DECAY
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:50
Last Modified : 17 May 2017 11:50
URI: http://epubs.surrey.ac.uk/id/eprint/832964

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