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Stoichiometric limitations of RF plasma deposited amorphous silicon-nitrogen alloys

Almeida, SA and Silva, SRP (1997) Stoichiometric limitations of RF plasma deposited amorphous silicon-nitrogen alloys THIN SOLID FILMS, 311 (1-2). pp. 133-137.

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Item Type: Article
Authors :
NameEmailORCID
Almeida, SAUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Date : 31 December 1997
Identification Number : https://doi.org/10.1016/S0040-6090(97)00460-4
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, MATERIALS SCIENCE, COATINGS & FILMS, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, amorphous materials, Rutherford backscattering spectroscopy, silicon nitride, stress, LIGHT-EMITTING DIODE, CHEMICAL-VAPOR-DEPOSITION, SINX, LAYERS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:48
Last Modified : 17 May 2017 14:59
URI: http://epubs.surrey.ac.uk/id/eprint/832790

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