Thin amorphous gallium nitride films formed by ion beam synthesis

Silva, SRP, Almeida, SA and Sealy, BJ (1999) Thin amorphous gallium nitride films formed by ion beam synthesis In: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society, 1998-06-16 - 1998-06-19, STRASBOURG, FRANCE.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Silva, SRP s.silva@surrey.ac.uk Almeida, SA Sealy, BJ
Date :	1 January 1999
DOI :	10.1016/S0168-583X(98)90550-X
Contributors :	Contribution Name Email ORCID publisher ELSEVIER SCIENCE BV,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, amorphous semiconductors, ion implantation, amorphous gallium nitride, thin films, silicon nitride
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:48
Last Modified :	23 Jan 2020 17:17
URI:	http://epubs.surrey.ac.uk/id/eprint/832778

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