Thin amorphous gallium nitride films formed by ion beam synthesis
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Silva, SRP, Almeida, SA and Sealy, BJ (1999) Thin amorphous gallium nitride films formed by ion beam synthesis In: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society, 1998-06-16 - 1998-06-19, STRASBOURG, FRANCE.
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) | ||||||||||||
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Date : | 1 January 1999 | ||||||||||||
DOI : | 10.1016/S0168-583X(98)90550-X | ||||||||||||
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Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, amorphous semiconductors, ion implantation, amorphous gallium nitride, thin films, silicon nitride | ||||||||||||
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Depositing User : | Symplectic Elements | ||||||||||||
Date Deposited : | 17 May 2017 11:48 | ||||||||||||
Last Modified : | 16 Jan 2019 18:22 | ||||||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/832778 |
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