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Thin amorphous gallium nitride films formed by ion beam synthesis

Silva, SRP, Almeida, SA and Sealy, BJ (1999) Thin amorphous gallium nitride films formed by ion beam synthesis In: Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, at the Spring Meeting of the European-Materials-Research-Society, 1998-06-16 - 1998-06-19, STRASBOURG, FRANCE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Almeida, SA
Sealy, BJ
Date : 1 January 1999
DOI : 10.1016/S0168-583X(98)90550-X
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, amorphous semiconductors, ion implantation, amorphous gallium nitride, thin films, silicon nitride
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Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:48
Last Modified : 23 Jan 2020 17:17

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