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Properties of nanocrystalline GaN films deposited by reactive sputtering

Knox-Davies, EC, Silva, SRP and Shannon, JM (2003) Properties of nanocrystalline GaN films deposited by reactive sputtering DIAMOND AND RELATED MATERIALS, 12 (8). pp. 1417-1421.

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Item Type: Article
Authors :
NameEmailORCID
Knox-Davies, ECUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Date : 1 August 2003
Identification Number : https://doi.org/10.1016/S0925-9635(03)00171-7
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, MATERIALS SCIENCE, MULTIDISCIPLINARY, gallium nitride, sputtering, optical properties characterisation, vibrational properties characterisation, GALLIUM NITRIDE FILMS, LOW-TEMPERATURE, THIN-FILMS, GROWTH
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:47
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832747

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