Memory switching in ion bombarded amorphous silicon carbide thin film devices
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Gateru, RG, Shannon, JM and Silva, SRP (2003) Memory switching in ion bombarded amorphous silicon carbide thin film devices In: Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2002 MRS Fall Meeting, 2002-12-02 - 2002-12-04, BOSTON, MA.
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) | ||||||||||||||||||||||||
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Date : | 1 January 2003 | ||||||||||||||||||||||||
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Uncontrolled Keywords : | Science & Technology, Technology, Engineering, Electrical & Electronic, Instruments & Instrumentation, Materials Science, Characterization & Testing, Engineering, Materials Science, ALLOYS | ||||||||||||||||||||||||
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Depositing User : | Symplectic Elements | ||||||||||||||||||||||||
Date Deposited : | 17 May 2017 11:47 | ||||||||||||||||||||||||
Last Modified : | 16 Jan 2019 18:21 | ||||||||||||||||||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/832742 |
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