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Memory switching in ion bombarded amorphous silicon carbide thin film devices

Gateru, RG, Shannon, JM and Silva, SRP (2003) Memory switching in ion bombarded amorphous silicon carbide thin film devices In: Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2002 MRS Fall Meeting, 2002-12-02 - 2002-12-04, BOSTON, MA.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Gateru, RGUNSPECIFIEDUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Date : 1 January 2003
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDSaddow, SEUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDLarkin, DJUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDSaks, NSUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDSchoner, AUNSPECIFIEDUNSPECIFIED
publisherMATERIALS RESEARCH SOCIETY, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Instruments & Instrumentation, Materials Science, Characterization & Testing, Engineering, Materials Science, ALLOYS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:47
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832742

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