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Memory switching in ion bombarded amorphous silicon carbide thin film devices

Gateru, RG, Shannon, JM and Silva, SRP (2003) Memory switching in ion bombarded amorphous silicon carbide thin film devices In: Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2002 MRS Fall Meeting, 2002-12-02 - 2002-12-04, BOSTON, MA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Gateru, RG
Shannon, JM
Silva, SRPs.silva@surrey.ac.uk
Date : 1 January 2003
Contributors :
ContributionNameEmailORCID
Saddow, SE
Larkin, DJ
Saks, NS
Schoner, A
publisherMATERIALS RESEARCH SOCIETY,
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Instruments & Instrumentation, Materials Science, Characterization & Testing, Engineering, Materials Science, ALLOYS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:47
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832742

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