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Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing

Orwa, JO, Silva, SRP and Shannon, JM (2005) Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing ELECTRONICS LETTERS, 41 (2). pp. 98-100.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Orwa, JOUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Date : 20 January 2005
Identification Number : 10.1049/el:20057595
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, FILMS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:47
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832740

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