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INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12)

ALVAREZ, AL, CALLE, F, WAGNER, J, SACEDON, A, MAIER, M, DEAVILA, SF, LOURENCO, MA, CALLEJA, E and MUNOZ, E (1994) INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12) JOURNAL OF APPLIED PHYSICS, 76 (12). pp. 7797-7804.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
ALVAREZ, ALUNSPECIFIEDUNSPECIFIED
CALLE, FUNSPECIFIEDUNSPECIFIED
WAGNER, JUNSPECIFIEDUNSPECIFIED
SACEDON, AUNSPECIFIEDUNSPECIFIED
MAIER, MUNSPECIFIEDUNSPECIFIED
DEAVILA, SFUNSPECIFIEDUNSPECIFIED
LOURENCO, MAm.lourenco@surrey.ac.ukUNSPECIFIED
CALLEJA, EUNSPECIFIEDUNSPECIFIED
MUNOZ, EUNSPECIFIEDUNSPECIFIED
Date : 15 December 1994
Identification Number : 10.1063/1.358521
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, MOLECULAR-BEAM EPITAXY, DOPED GALLIUM-ARSENIDE, HEAVILY SI, HYDROSTATIC-PRESSURE, INFRARED-ABSORPTION, SILICON IMPURITIES, RAMAN-SCATTERING, OHMIC CONTACTS, DX CENTERS, N-GAAS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832526

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