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RELAXATION OF STRAINED INGAAS/GAAS LAYERS UNDER THERMAL-PROCESSING

LOURENCO, MA, HOMEWOOD, KP and CONSIDINE, L (1994) RELAXATION OF STRAINED INGAAS/GAAS LAYERS UNDER THERMAL-PROCESSING In: 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 94), 1994-05-18 - 1994-05-20, PARMA, ITALY.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
LOURENCO, MAm.lourenco@surrey.ac.ukUNSPECIFIED
HOMEWOOD, KPUNSPECIFIEDUNSPECIFIED
CONSIDINE, LUNSPECIFIEDUNSPECIFIED
Date : 1 December 1994
Identification Number : https://doi.org/10.1016/0921-5107(94)90116-3
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE SA LAUSANNE, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, ANNEALING, DOUBLE-CRYSTAL X-RAY DIFFRACTION, INDIUM GALLIUM ARSENIDE, STRAINED LAYERS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832518

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