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Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

Kidd, P, Dunstan, DJ, Colson, HG, Lourenco, MA, Sacedon, A, GonzalezSanz, F, Gonzalez, L, Gonzalez, Y, Garcia, R, Gonzalez, D, Pacheco, FJ and Goodhew, PJ (1996) Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers JOURNAL OF CRYSTAL GROWTH, 169 (4). pp. 649-659.

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Item Type: Article
Authors :
NameEmailORCID
Kidd, PUNSPECIFIEDUNSPECIFIED
Dunstan, DJUNSPECIFIEDUNSPECIFIED
Colson, HGUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Sacedon, AUNSPECIFIEDUNSPECIFIED
GonzalezSanz, FUNSPECIFIEDUNSPECIFIED
Gonzalez, LUNSPECIFIEDUNSPECIFIED
Gonzalez, YUNSPECIFIEDUNSPECIFIED
Garcia, RUNSPECIFIEDUNSPECIFIED
Gonzalez, DUNSPECIFIEDUNSPECIFIED
Pacheco, FJUNSPECIFIEDUNSPECIFIED
Goodhew, PJUNSPECIFIEDUNSPECIFIED
Date : 1 December 1996
Identification Number : https://doi.org/10.1016/S0022-0248(96)00665-3
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, STRAIN RELAXATION, PLASTIC RELAXATION, BEAM-EPITAXY, EPILAYERS, GROWTH, RELIEF, GAAS, DIFFRACTION, DESIGN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832515

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