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Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

Kidd, P, Dunstan, DJ, Colson, HG, Lourenco, MA, Sacedon, A, GonzalezSanz, F, Gonzalez, L, Gonzalez, Y, Garcia, R, Gonzalez, D , Pacheco, FJ and Goodhew, PJ (1996) Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers JOURNAL OF CRYSTAL GROWTH, 169 (4). pp. 649-659.

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Item Type: Article
Authors :
NameEmailORCID
Kidd, PUNSPECIFIEDUNSPECIFIED
Dunstan, DJUNSPECIFIEDUNSPECIFIED
Colson, HGUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Sacedon, AUNSPECIFIEDUNSPECIFIED
GonzalezSanz, FUNSPECIFIEDUNSPECIFIED
Gonzalez, LUNSPECIFIEDUNSPECIFIED
Gonzalez, YUNSPECIFIEDUNSPECIFIED
Garcia, RUNSPECIFIEDUNSPECIFIED
Gonzalez, DUNSPECIFIEDUNSPECIFIED
Pacheco, FJUNSPECIFIEDUNSPECIFIED
Goodhew, PJUNSPECIFIEDUNSPECIFIED
Date : 1 December 1996
Identification Number : 10.1016/S0022-0248(96)00665-3
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, STRAIN RELAXATION, PLASTIC RELAXATION, BEAM-EPITAXY, EPILAYERS, GROWTH, RELIEF, GAAS, DIFFRACTION, DESIGN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832515

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