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Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing

Beanland, R, Lourenco, MA and Homewood, KP (1997) Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing In: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, 1997-04-07 - 1997-04-10, UNIV OXFORD, OXFORD, ENGLAND.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Beanland, RUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Date : 1 January 1997
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDCullis, AGUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDHutchison, JLUNSPECIFIEDUNSPECIFIED
publisherIOP PUBLISHING LTD, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Microscopy, Physics, Multidisciplinary, Physics, Condensed Matter, Physics, EPILAYERS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832513

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