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The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes

Knights, AP, Morrison, DJ, Wright, NG, Johnson, CM, O'Neill, AG, Ortolland, S, Homewood, KP, Lourenco, MA, Gwilliam, RM and Coleman, PG (1999) The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes In: Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting, 1999-04-05 - 1999-04-08, SAN FRANCISCO, CA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Knights, AP
Morrison, DJ
Wright, NG
Johnson, CM
O'Neill, AG
Ortolland, S
Homewood, KP
Lourenco, MAm.lourenco@surrey.ac.uk
Gwilliam, RM
Coleman, PG
Date : 1 January 1999
Contributors :
ContributionNameEmailORCID
Binari, SC
Burk, AA
Melloch, MR
Nguyen, C
publisherMATERIALS RESEARCH SOCIETY,
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, POSITRON, DEFECTS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832509

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