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Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

Knights, AP, Lourenco, MA, Homewood, KP, Morrison, DJ, Wright, NG, Ortolland, S, Johnson, CM, O'Neill, AG, Coleman, PG, Hilton, KP and Uren, MJ (2000) Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation JOURNAL OF APPLIED PHYSICS, 87 (8). pp. 3973-3977.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Knights, APUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Morrison, DJUNSPECIFIEDUNSPECIFIED
Wright, NGUNSPECIFIEDUNSPECIFIED
Ortolland, SUNSPECIFIEDUNSPECIFIED
Johnson, CMUNSPECIFIEDUNSPECIFIED
O'Neill, AGUNSPECIFIEDUNSPECIFIED
Coleman, PGUNSPECIFIEDUNSPECIFIED
Hilton, KPUNSPECIFIEDUNSPECIFIED
Uren, MJUNSPECIFIEDUNSPECIFIED
Date : 15 April 2000
Identification Number : 10.1063/1.372443
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, POSITRON, DEFECTS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832505

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