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Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy

Lourenco, MA, Gardiner, DJ, Bowden, M, Hedley, J and Wood, D (2000) Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy JOURNAL OF MATERIALS SCIENCE LETTERS, 19 (9). pp. 767-769.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Gardiner, DJUNSPECIFIEDUNSPECIFIED
Bowden, MUNSPECIFIEDUNSPECIFIED
Hedley, JUNSPECIFIEDUNSPECIFIED
Wood, DUNSPECIFIEDUNSPECIFIED
Date : 1 May 2000
Identification Number : https://doi.org/10.1023/A:1006752321075
Uncontrolled Keywords : Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832503

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