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Ion beam synthesized silicides: growth, characterization and devices

Homewood, KP, Reeson, KJ, Gwilliam, RM, Kewell, AK, Lourenco, MA, Shao, G, Chen, YL, Sharpe, JS, McKinty, CN and Butler, T (2001) Ion beam synthesized silicides: growth, characterization and devices In: 46th Spring Meeting of the Japan-Society-of-Applied-Physics, 1999 - ?, CHIBA, JAPAN.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Homewood, KPUNSPECIFIEDUNSPECIFIED
Reeson, KJUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Kewell, AKUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Shao, GUNSPECIFIEDUNSPECIFIED
Chen, YLUNSPECIFIEDUNSPECIFIED
Sharpe, JSUNSPECIFIEDUNSPECIFIED
McKinty, CNUNSPECIFIEDUNSPECIFIED
Butler, TUNSPECIFIEDUNSPECIFIED
Date : 15 January 2001
Identification Number : 10.1016/S0040-6090(00)01742-9
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE SA, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, MATERIALS SCIENCE, COATINGS & FILMS, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, semiconducting silicides, ion beam synthesis, optoelectronic devices, SEMICONDUCTING FESI2 LAYERS, 1.5 MU-M, PHASE-TRANSFORMATIONS, OPTICAL-PROPERTIES, BETA-FESI2, LUMINESCENCE, ALPHA
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832501

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