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A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy

Lourenco, MA, Knights, AP, Homewood, KP, Gwilliam, RM, Simpson, PJ and Mascher, P (2001) A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy In: 12th International Conference on Ion Beam Modification of Materials (IBMM2000), 2000-09-03 - 2000-09-08, CANELA, BRAZIL.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Simpson, PJUNSPECIFIEDUNSPECIFIED
Mascher, PUNSPECIFIEDUNSPECIFIED
Date : 1 April 2001
Identification Number : https://doi.org/10.1016/S0168-583X(00)00640-6
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, SI, PROFILES, DEFECTS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832499

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