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Dislocation engineered beta-FeSi2 light emitting diodes

Lourenco, MA, Gwilliam, RM, Shao, G and Homewood, KP (2003) Dislocation engineered beta-FeSi2 light emitting diodes In: 13th International Conference on Ion Beam Modification of Materials, 2002-09-01 - 2002-09-06, KOBE, JAPAN.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Gwilliam, RM
Shao, G
Homewood, KP
Date : 1 May 2003
DOI : 10.1016/S0168-583X(03)00788-2
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, light emitting device, electroluminescence, iron disilicide, dislocation engineered, ROOM-TEMPERATURE, MU-M, ELECTROLUMINESCENCE, EMISSION, DEVICES
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:44
Last Modified : 23 Jan 2020 17:12

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