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Positron annihilation studies of detector grade n-type silicon irradiated with 140 MeV oxygen (O6+) ions

Chaudhuri, SK, Mukherjee, S, Rajesh, PV, Ghugre, SS and Das, D (2005) Positron annihilation studies of detector grade n-type silicon irradiated with 140 MeV oxygen (O6+) ions Physica B: Condensed Matter, 362 (1-4). pp. 249-254.

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Abstract

Detector grade n-type float-zone silicon irradiated with 140 MeV O 6+ ions to a dose of 5×1015 particles/cm2 was studied by positron annihilation spectroscopy. Vacancy clusters containing five vacancies were detected in the irradiated sample. Isochronal annealing studies of the irradiated sample reveal the dissociation of five-vacancy clusters and formation of vacancy agglomerates V3, V6 and vacancy-oxygen complexes in the temperature range 250-500 °C. The vacancy-oxygen complexes dissociate at 550 °C and released vacancies agglomerate around 600 °C to form voids comprising 10 vacancies. In the temperature range 600-700 °C, the voids dissociate and around 750 °C advanced vacancy-oxygen complexes VmOn (n>m) form. © 2005 Elsevier B.V. All rights reserved.

Item Type: Article
Authors :
NameEmailORCID
Chaudhuri, SKs.chaudhuri@surrey.ac.ukUNSPECIFIED
Mukherjee, SUNSPECIFIEDUNSPECIFIED
Rajesh, PVUNSPECIFIEDUNSPECIFIED
Ghugre, SSUNSPECIFIEDUNSPECIFIED
Das, DUNSPECIFIEDUNSPECIFIED
Date : 15 May 2005
Identification Number : 10.1016/j.physb.2005.02.020
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:43
Last Modified : 17 May 2017 11:43
URI: http://epubs.surrey.ac.uk/id/eprint/832454

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