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Oxygen enrichment of silicon wafer by ion implantation method and fabrication of surface barrier detectors

Chaudhuri, SK, Rajesh, PV, Ghugre, SS and Das, D (2005) Oxygen enrichment of silicon wafer by ion implantation method and fabrication of surface barrier detectors Defect and Diffusion Forum, 245-24. pp. 23-28.

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Abstract

Inter University Consortium for DAE Facilities Silicon surface barrier (SSB) detectors have been fabricated with oxygen enriched, high-resistivity, detector grade, n-type FZ silicon. Oxygen enrichment of the wafer was done by high-energy (140 MeV) oxygen ion implantation. Annealing of the irradiated silicon wafer was done to minimize the irradiation-induced defect concentration. Positron annihilation lifetime studies were used to select the annealing temperature. A comparative study was carried out among various SSB detectors made from as-grown, as-irradiated and annealed silicon wafers. Detector made from the annealed wafer worked satisfactorily and its performance was comparable with that of a detector made from as-grown crystal.

Item Type: Article
Authors :
NameEmailORCID
Chaudhuri, SKs.chaudhuri@surrey.ac.ukUNSPECIFIED
Rajesh, PVUNSPECIFIEDUNSPECIFIED
Ghugre, SSUNSPECIFIEDUNSPECIFIED
Das, DUNSPECIFIEDUNSPECIFIED
Date : 1 December 2005
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:43
Last Modified : 17 May 2017 11:43
URI: http://epubs.surrey.ac.uk/id/eprint/832453

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