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Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies

Mishra, AK, Chaudhuri, SK, Mukherjee, S, Priyam, A, Saha, A and Das, D (2007) Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies Journal of Applied Physics, 102 (10).

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Abstract

Defects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19-39 nm. X ray diffractograms confirmed the single-phase wurtzite structure formation. Photoluminescence measurements showed a strong violet band at 434 nm, which has been identified as due to electronic transitions from the zinc interstitial defect level to the top of the valence band. A marked decrease in the intensity of the violet emission with increasing heat-treatment temperature has been observed, which is attributed to recombination of zinc interstitials with zinc vacancies. Positron annihilation spectroscopy has been employed to understand the dynamics of the vacancy-type defects and their annealing behavior. The observed variation of the defect related lifetime components with heat-treatment temperature has been successfully explained by using a three-state trapping model. The results of PL and PAS studies in the present case are found to be complementary to each other. © 2007 American Institute of Physics.

Item Type: Article
Authors :
NameEmailORCID
Mishra, AKUNSPECIFIEDUNSPECIFIED
Chaudhuri, SKs.chaudhuri@surrey.ac.ukUNSPECIFIED
Mukherjee, SUNSPECIFIEDUNSPECIFIED
Priyam, AUNSPECIFIEDUNSPECIFIED
Saha, AUNSPECIFIEDUNSPECIFIED
Das, DUNSPECIFIEDUNSPECIFIED
Date : 7 December 2007
Identification Number : https://doi.org/10.1063/1.2817598
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:43
Last Modified : 17 May 2017 11:43
URI: http://epubs.surrey.ac.uk/id/eprint/832451

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