University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Deactivation of B and BF2 profiles after non-melt laser annealing

Sharp, JA, Cowern, NEB, Webb, RP, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA and Kirkby, KJ (2006) Deactivation of B and BF2 profiles after non-melt laser annealing Materials Research Society Symposium Proceedings, 912. pp. 159-163.

Full text not available from this repository.

Abstract

Ultra-shallow B and BF 2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1×10 15 B cm -2 at an effective energy of 500eV. The presence of F from the BF 2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 ohms/sq from B implants only to 750-1100 ohms/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron. © 2006 Materials Research Society.

Item Type: Article
Authors :
NameEmailORCID
Sharp, JAUNSPECIFIEDUNSPECIFIED
Cowern, NEBUNSPECIFIEDUNSPECIFIED
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Giubertoni, DUNSPECIFIEDUNSPECIFIED
Gennaro, SUNSPECIFIEDUNSPECIFIED
Bersani, MUNSPECIFIEDUNSPECIFIED
Foad, MAUNSPECIFIEDUNSPECIFIED
Kirkby, KJk.kirkby@surrey.ac.ukUNSPECIFIED
Date : 21 November 2006
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:41
Last Modified : 17 May 2017 14:58
URI: http://epubs.surrey.ac.uk/id/eprint/832309

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800