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Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation Amorphous and Nanocrystalline Silicon Science and Technology-2005, 862. pp. 507-512.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Chow, CF
Gao, Y
Wong, SP
Ke, N
Li, Q
Cheung, WY
Shao, G
Lourenco, MAm.lourenco@surrey.ac.uk
Homewood, KP
Date : 1 January 2005
Contributors :
ContributionNameEmailORCID
Collins, RW
Taylor, PC
Kondo, M
Carius, R
Biswas, R
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Crystallography, Instruments & Instrumentation, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SI, SILICON, ORIGIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:36
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/832062

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