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Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation Amorphous and Nanocrystalline Silicon Science and Technology-2005, 862. pp. 507-512.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Chow, CFUNSPECIFIEDUNSPECIFIED
Gao, YUNSPECIFIEDUNSPECIFIED
Wong, SPUNSPECIFIEDUNSPECIFIED
Ke, NUNSPECIFIEDUNSPECIFIED
Li, QUNSPECIFIEDUNSPECIFIED
Cheung, WYUNSPECIFIEDUNSPECIFIED
Shao, GUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Date : 1 January 2005
Contributors :
ContributionNameEmailORCID
UNSPECIFIEDCollins, RWUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDTaylor, PCUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDKondo, MUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDCarius, RUNSPECIFIEDUNSPECIFIED
UNSPECIFIEDBiswas, RUNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Crystallography, Instruments & Instrumentation, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SI, SILICON, ORIGIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:36
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/832062

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