Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation Amorphous and Nanocrystalline Silicon Science and Technology-2005, 862. pp. 507-512.

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Item Type:	Article
Authors :	Name Email ORCID Chow, CF UNSPECIFIED UNSPECIFIED Gao, Y UNSPECIFIED UNSPECIFIED Wong, SP UNSPECIFIED UNSPECIFIED Ke, N UNSPECIFIED UNSPECIFIED Li, Q UNSPECIFIED UNSPECIFIED Cheung, WY UNSPECIFIED UNSPECIFIED Shao, G UNSPECIFIED UNSPECIFIED Lourenco, MA m.lourenco@surrey.ac.uk UNSPECIFIED Homewood, KP UNSPECIFIED UNSPECIFIED
Date :	1 January 2005
Contributors :	Contribution Name Email ORCID UNSPECIFIED Collins, RW UNSPECIFIED UNSPECIFIED UNSPECIFIED Taylor, PC UNSPECIFIED UNSPECIFIED UNSPECIFIED Kondo, M UNSPECIFIED UNSPECIFIED UNSPECIFIED Carius, R UNSPECIFIED UNSPECIFIED UNSPECIFIED Biswas, R UNSPECIFIED UNSPECIFIED
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Technology, Crystallography, Instruments & Instrumentation, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SI, SILICON, ORIGIN
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:36
Last Modified :	17 May 2017 14:57
URI:	http://epubs.surrey.ac.uk/id/eprint/832062

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