Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation
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Chow, CF, Gao, Y, Wong, SP, Ke, N, Li, Q, Cheung, WY, Shao, G, Lourenco, MA and Homewood, KP (2005) Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation Amorphous and Nanocrystalline Silicon Science and Technology-2005, 862. pp. 507-512.
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| Date : | 1 January 2005 | ||||||||||||||||||||||||||||||
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| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Technology, Crystallography, Instruments & Instrumentation, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SI, SILICON, ORIGIN | ||||||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | ||||||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:36 | ||||||||||||||||||||||||||||||
| Last Modified : | 17 May 2017 14:57 | ||||||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/832062 |
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