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Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition

Milosavljevic, M, Shao, G, Gwilliam, RM, Gao, Y, Lourenco, MA, Valizadeh, R, Colligon, JS and Homewood, KP (2004) Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition In: 8th IUMRS International Conference on Advanced Materials (ICAM 2003), 2003 - ?, Yokohama, JAPAN.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Milosavljevic, MUNSPECIFIEDUNSPECIFIED
Shao, GUNSPECIFIEDUNSPECIFIED
Gwilliam, RMUNSPECIFIEDUNSPECIFIED
Gao, YUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Valizadeh, RUNSPECIFIEDUNSPECIFIED
Colligon, JSUNSPECIFIEDUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Date : 2 August 2004
Identification Number : https://doi.org/10.1016/j.tsf.2004.02.067
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE SA, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, MATERIALS SCIENCE, COATINGS & FILMS, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, iron disilicide, amorphous phase, co-sputter deposition, ion implantation, LIGHT-EMITTING DIODE, OPTICAL-PROPERTIES, IRON DISILICIDE, PHASE-STABILITY, THIN-FILMS, SILICON, POLYCRYSTALLINE, TEMPERATURE, PREDICTION, ABSORPTION
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:36
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/832054

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