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Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

Chow, CF, Wong, SP, Gao, Y, Ke, N, Li, Q, Cheung, WY, Lourenco, MA and Homewood, KP (2005) Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Chow, CFUNSPECIFIEDUNSPECIFIED
Wong, SPUNSPECIFIEDUNSPECIFIED
Gao, YUNSPECIFIEDUNSPECIFIED
Ke, NUNSPECIFIEDUNSPECIFIED
Li, QUNSPECIFIEDUNSPECIFIED
Cheung, WYUNSPECIFIEDUNSPECIFIED
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Homewood, KPUNSPECIFIEDUNSPECIFIED
Date : 5 December 2005
Identification Number : 10.1016/j.mseb.2005.08.038
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE SA, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, electroluminescence, Si MOS structure, FeSi2, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SILICON, ORIGIN, PHOTOLUMINESCENCE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:36
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/832049

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