Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
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Chow, CF, Wong, SP, Gao, Y, Ke, N, Li, Q, Cheung, WY, Lourenco, MA and Homewood, KP (2005) Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.
Full text not available from this repository.| Item Type: | Conference or Workshop Item (UNSPECIFIED) | |||||||||||||||||||||||||||
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| Divisions : | Surrey research (other units) | |||||||||||||||||||||||||||
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| Date : | 5 December 2005 | |||||||||||||||||||||||||||
| DOI : | 10.1016/j.mseb.2005.08.038 | |||||||||||||||||||||||||||
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| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, electroluminescence, Si MOS structure, FeSi2, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SILICON, ORIGIN, PHOTOLUMINESCENCE | |||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 11:36 | |||||||||||||||||||||||||||
| Last Modified : | 23 Jan 2020 17:04 | |||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/832049 |
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