Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

Chow, CF, Wong, SP, Gao, Y, Ke, N, Li, Q, Cheung, WY, Lourenco, MA and Homewood, KP (2005) Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Chow, CF Wong, SP Gao, Y Ke, N Li, Q Cheung, WY Lourenco, MA m.lourenco@surrey.ac.uk Homewood, KP
Date :	5 December 2005
DOI :	10.1016/j.mseb.2005.08.038
Contributors :	Contribution Name Email ORCID publisher ELSEVIER SCIENCE SA,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, electroluminescence, Si MOS structure, FeSi2, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SILICON, ORIGIN, PHOTOLUMINESCENCE
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:36
Last Modified :	16 Jan 2019 18:18
URI:	http://epubs.surrey.ac.uk/id/eprint/832049

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