Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
Tools
Chow, CF, Wong, SP, Gao, Y, Ke, N, Li, Q, Cheung, WY, Lourenco, MA and Homewood, KP (2005) Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation In: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting, 2005-05-31 - 2005-06-03, Strasbourg, FRANCE.
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) | |||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Divisions : | Surrey research (other units) | |||||||||||||||||||||||||||
Authors : |
|
|||||||||||||||||||||||||||
Date : | 5 December 2005 | |||||||||||||||||||||||||||
DOI : | 10.1016/j.mseb.2005.08.038 | |||||||||||||||||||||||||||
Contributors : |
|
|||||||||||||||||||||||||||
Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, electroluminescence, Si MOS structure, FeSi2, BEAM-SYNTHESIZED BETA-FESI2, LIGHT-EMITTING DIODE, MU-M LUMINESCENCE, TEMPERATURE, SILICON, ORIGIN, PHOTOLUMINESCENCE | |||||||||||||||||||||||||||
Related URLs : | ||||||||||||||||||||||||||||
Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||
Date Deposited : | 17 May 2017 11:36 | |||||||||||||||||||||||||||
Last Modified : | 23 Jan 2020 17:04 | |||||||||||||||||||||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/832049 |
Actions (login required)
![]() |
View Item |
Downloads
Downloads per month over past year