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Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Cherns, D, Henley, SJ and Ponce, FA (2001) Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence APPLIED PHYSICS LETTERS, 78 (18). pp. 2691-2693.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Cherns, DUNSPECIFIEDUNSPECIFIED
Henley, SJs.henley@surrey.ac.ukUNSPECIFIED
Ponce, FAUNSPECIFIEDUNSPECIFIED
Date : 30 April 2001
Identification Number : https://doi.org/10.1063/1.1369610
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, GALLIUM NITRIDE, GAN, LAYERS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831778

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