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Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Henley, SJ, Bewick, A, Cherns, D and Ponce, FA (2001) Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells JOURNAL OF CRYSTAL GROWTH, 230 (3-4). pp. 481-486.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Henley, SJs.henley@surrey.ac.ukUNSPECIFIED
Bewick, AUNSPECIFIEDUNSPECIFIED
Cherns, DUNSPECIFIEDUNSPECIFIED
Ponce, FAUNSPECIFIEDUNSPECIFIED
Date : 1 September 2001
Identification Number : https://doi.org/10.1016/S0022-0248(01)01245-3
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, defects, quantum wells, piezoelectric materials, semiconducting III-V materials, CENTERS, GAN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831777

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