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The influence of defects and piezoelectric fields on the luminescence from InGaN/GaN single quantum wells

Henley, SJ and Cherns, D (2001) The influence of defects and piezoelectric fields on the luminescence from InGaN/GaN single quantum wells Materials Research Society Symposium - Proceedings, 639.

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Abstract

High spatial resolution cathodoluminescence (CL) studies have been carried out on GaN/InGaN/(0001)GaN single quantum well (SQW) structures in a field emission scanning electron microscope at 5kV and temperatures down to 8K. Direct comparison of QW CL maps with transmission electron microscope studies of plan-view samples showed that edge type threading dislocations act as non-radiative recombination centers. Spectra taken from extended areas showed a progressive blue shift in the QW emission from around 460nm at low beam intensities to about 445nm as the beam intensity was increased. This effect which correlated with a decrease in the spatial resolution is interpreted as due to an increase in the diffusion length of carriers in the SQW due to a combination of screening of the piezoelectric field and band filling effects.

Item Type: Article
Authors :
NameEmailORCID
Henley, SJs.henley@surrey.ac.ukUNSPECIFIED
Cherns, DUNSPECIFIEDUNSPECIFIED
Date : 1 December 2001
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831776

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