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Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose

Henley, SJ and Cherns, D (2003) Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose JOURNAL OF APPLIED PHYSICS, 93 (7). pp. 3934-3939.

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Item Type: Article
Authors :
NameEmailORCID
Henley, SJs.henley@surrey.ac.ukUNSPECIFIED
Cherns, DUNSPECIFIEDUNSPECIFIED
Date : 1 April 2003
Identification Number : https://doi.org/10.1063/1.1559417
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, LIGHT-EMITTING-DIODES, MULTIPLE-QUANTUM WELLS, SCREW DISLOCATIONS, V-DEFECTS, GAN, CENTERS, LAYERS, FIELDS, GAINN, EDGE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831773

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