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Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

Harmer, P, Halsall, MP, Wolverson, D, Parbrook, PJ and Henley, SJ (2004) Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (3), PII S0268-. L22-L24.

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Item Type: Article
Authors :
NameEmailORCID
Harmer, PUNSPECIFIEDUNSPECIFIED
Halsall, MPUNSPECIFIEDUNSPECIFIED
Wolverson, DUNSPECIFIEDUNSPECIFIED
Parbrook, PJUNSPECIFIEDUNSPECIFIED
Henley, SJs.henley@surrey.ac.ukUNSPECIFIED
Date : 1 March 2004
Identification Number : https://doi.org/10.1088/0268-1242/19/3/L04
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, CONDENSED MATTER, LIGHT-EMITTING-DIODES, III-V NITRIDES, GAN, HETEROSTRUCTURES, PHASE, FILMS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831769

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