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HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON

ALTRIP, JL, EVANS, AGR, LOGAN, J and JEYNES, C (1990) HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON SOLID-STATE ELECTRONICS, 33 (6). pp. 659-664.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
ALTRIP, JLUNSPECIFIEDUNSPECIFIED
EVANS, AGRUNSPECIFIEDUNSPECIFIED
LOGAN, JUNSPECIFIEDUNSPECIFIED
JEYNES, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Date : 1 June 1990
Identification Number : 10.1016/0038-1101(90)90179-I
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831756

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