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RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS

CREAN, GM, COLE, PD and JEYNES, C (1990) RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS SOLID-STATE ELECTRONICS, 33 (6). pp. 655-658.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
CREAN, GMUNSPECIFIEDUNSPECIFIED
COLE, PDUNSPECIFIEDUNSPECIFIED
JEYNES, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Date : 1 June 1990
Identification Number : https://doi.org/10.1016/0038-1101(90)90178-H
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831755

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