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REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING

MAHMOOD, F, AHMED, H, JEYNES, C and GILLIN, WP (1992) REACTIVE FORMATION OF COBALT SILICIDE ON SINGLE-CRYSTAL SILICON UNDER RAPID ELECTRON-BEAM HEATING APPLIED SURFACE SCIENCE, 59 (1). pp. 55-62.

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Item Type: Article
Authors :
NameEmailORCID
MAHMOOD, FUNSPECIFIEDUNSPECIFIED
AHMED, HUNSPECIFIEDUNSPECIFIED
JEYNES, Cc.jeynes@surrey.ac.ukUNSPECIFIED
GILLIN, WPUNSPECIFIEDUNSPECIFIED
Date : 1 May 1992
Identification Number : https://doi.org/10.1016/0169-4332(92)90168-W
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Chemistry, Physical, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Chemistry, Materials Science, Physics, CHEMISTRY, PHYSICAL, MATERIALS SCIENCE, COATINGS & FILMS, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, SELF-ALIGNED COSI2, THIN-FILMS, INTERCONNECTION, DIFFUSION, DISILICIDE, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831744

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