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STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING

STRICKLAND, KR, EDWARDS, SC, WIGMORE, JK, COLLINS, RA and JEYNES, C (1992) STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING SURFACE AND INTERFACE ANALYSIS, 18 (8). pp. 631-636.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
STRICKLAND, KRUNSPECIFIEDUNSPECIFIED
EDWARDS, SCUNSPECIFIEDUNSPECIFIED
WIGMORE, JKUNSPECIFIEDUNSPECIFIED
COLLINS, RAUNSPECIFIEDUNSPECIFIED
JEYNES, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Date : 1 August 1992
Identification Number : 10.1002/sia.740180810
Uncontrolled Keywords : Science & Technology, Physical Sciences, Chemistry, Physical, Chemistry, CHEMISTRY, PHYSICAL, DIFFUSE-SCATTERING, SURFACES, PULSES
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831742

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