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GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS

DUNSTAN, DJ, DIXON, RH, KIDD, P, HOWARD, LK, WILKINSON, VA, LAMBKIN, JD, JEYNES, C, HALSALL, MP, LANCEFIELD, D, EMENY, MT, GOODHEW, PJ, HOMEWOOD, KP, SEALY, BJ and ADAMS, AR (1993) GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS JOURNAL OF CRYSTAL GROWTH, 126 (4). pp. 589-600.

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Item Type: Article
Authors :
NameEmailORCID
DUNSTAN, DJUNSPECIFIEDUNSPECIFIED
DIXON, RHUNSPECIFIEDUNSPECIFIED
KIDD, PUNSPECIFIEDUNSPECIFIED
HOWARD, LKUNSPECIFIEDUNSPECIFIED
WILKINSON, VAUNSPECIFIEDUNSPECIFIED
LAMBKIN, JDUNSPECIFIEDUNSPECIFIED
JEYNES, Cc.jeynes@surrey.ac.ukUNSPECIFIED
HALSALL, MPUNSPECIFIEDUNSPECIFIED
LANCEFIELD, DUNSPECIFIEDUNSPECIFIED
EMENY, MTUNSPECIFIEDUNSPECIFIED
GOODHEW, PJUNSPECIFIEDUNSPECIFIED
HOMEWOOD, KPUNSPECIFIEDUNSPECIFIED
SEALY, BJUNSPECIFIEDUNSPECIFIED
ADAMS, ARUNSPECIFIEDUNSPECIFIED
Date : 1 February 1993
Identification Number : https://doi.org/10.1016/0022-0248(93)90808-A
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, QUANTUM-WELLS, MISFIT DISLOCATIONS, CRITICAL THICKNESS, LAYER, RELAXATION, STRAIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831739

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