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NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES

LYNCH, S, MURTAGH, M, CREAN, GM, KELLY, PV, OCONNOR, M and JEYNES, C (1993) NONDESTRUCTIVE DEPTH PROFILING OF SILICON ION-IMPLANTATION INDUCED DAMAGE IN SILICON (100) SUBSTRATES In: 1ST INTERNATIONAL CONF ON SPECTROSCOPIC ELLIPSOMETRY, 1993-01-11 - 1993-01-14, MINIST RECH & ESPACE, PARIS, FRANCE.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
LYNCH, SUNSPECIFIEDUNSPECIFIED
MURTAGH, MUNSPECIFIEDUNSPECIFIED
CREAN, GMUNSPECIFIEDUNSPECIFIED
KELLY, PVUNSPECIFIEDUNSPECIFIED
OCONNOR, MUNSPECIFIEDUNSPECIFIED
JEYNES, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Date : 12 October 1993
Identification Number : 10.1016/0040-6090(93)90089-8
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE SA LAUSANNE, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, MATERIALS SCIENCE, COATINGS & FILMS, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, PHYSICS, CONDENSED MATTER, SPECTROSCOPIC ELLIPSOMETRY, REFLECTANCE, GAAS, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831735

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