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Ion implanted silicides studies by frequency noise level measurements

Stojanovic, M, Vasic, A and Jeynes, C (1996) Ion implanted silicides studies by frequency noise level measurements In: Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam Processing - From Engineering to Atomic Scale Issues, at the E-MRS 95 Spring Meeting, 1995-05-22 - 1995-05-26, STRASBOURG, FRANCE.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Stojanovic, M
Vasic, A
Date : 1 May 1996
DOI : 10.1016/0168-583X(95)01281-8
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, CONTACTS, SILICON
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:32
Last Modified : 23 Jan 2020 16:57

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