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The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

Ashwin, MJ, Pritchard, RE, Newman, RC, Joyce, TB, Bullough, TJ, Wagner, J, Jeynes, C, Breuer, SJ, Jones, R, Briddon, PR and Oberg, S (1996) The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon JOURNAL OF APPLIED PHYSICS, 80 (12). pp. 6754-6760.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Ashwin, MJUNSPECIFIEDUNSPECIFIED
Pritchard, REUNSPECIFIEDUNSPECIFIED
Newman, RCUNSPECIFIEDUNSPECIFIED
Joyce, TBUNSPECIFIEDUNSPECIFIED
Bullough, TJUNSPECIFIEDUNSPECIFIED
Wagner, JUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Breuer, SJUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Oberg, SUNSPECIFIEDUNSPECIFIED
Date : 15 December 1996
Identification Number : https://doi.org/10.1063/1.363803
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, P-TYPE GAAS, HYDROGEN COMPLEXES, INGAAS, TRIMETHYLGALLIUM, DECOMPOSITION, MOMBE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 17 May 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/831723

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